General De
MEM2307XG Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.
Features
-30V/-4.1A
RDS(ON)＜88mÙ@ VGS=-10V,ID=-4.1A
RDS(ON)＜108mÙ@ VGS=-4.5V,ID=-3A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package: SOT23
Typical Application
Power management
Load switch
Battery protection
